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W3EG7264S-AD4 -BD4
PRELIMINARY*
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL
FEATURES
Double-data-rate architecture DDR200, DDR266 DDR333 * JEDEC design specifications Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2.5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh Serial presence detect Dual Rank Power supply: 2.5V 0.2V 200 pin SO-DIMM package * Package height options: AD4: 35.05 mm (1.38") BD4: 31.75 mm (1.25")
NOTE: Consult factory for availability of: * RoHS compliant products * Vendor source control options * Industrial temperature option * This product is under development, is not qualified or characterized and is subject to change without notice.
DESCRIPTION
The W3EG7264S is a 2x32Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs stacked in 54 pin TSOP packages mounted on a 200 pin FR4 substrate. This module is structured as 2 Ranks of 64Mx72 DDR SDRAM. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
OPERATING FREQUENCIES
DDR333@CL=2.5 Clock Speed CL-tRCD-tRP 166MHz 2.5-3-3 DDR266@CL=2 133MHz 2-2-2 DDR266@CL=2.5 133MHz 2.5-3-3 DDR200@CL=2 100MHz 2-2-2
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PIN CONFIGURATION
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Symbol VREF VREF VSS VSS DQ0 DQ4 DQ1 DQ5 VCC VCC DQS0 DQM0 DQ2 DQ6 VSS VSS DQ3 DQ7 DQ8 DQ12 VCC VCC DQ9 DQ13 DQS1 DQM1 VSS VSS DQ10 DQ14 DQ11 DQ15 VCC VCC CK0 VCC CK0# VSS VSS VSS DQ16 DQ20 DQ17 DQ21 VCC VCC DQS2 DQM2 DQ18 DQ22 Pin 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 Symbol VSS VSS DQ19 DQ23 DQ24 DQ28 VCC VCC DQ25 DQ29 DQS3 DQM3 VSS VSS DQ26 DQ30 DQ27 DQ31 VCC VCC CB0 CB4 CB1 CB5 VSS VSS DQS8 DQM8 CB2 CB6 VCC VCC CB3 CB7 NC NC VSS VSS CK2* VSS CK2#* VCC VCC VCC CKE1 CKE0 NC NC A12 A11 Pin 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 Symbol A9 A8 VSS VSS A7 A6 A5 A4 A3 A2 A1 A0 VCC VCC A10/AP BA1 BA0 RAS# WE# CAS# CS0# CS1# NC NC VSS VSS DQ32 DQ36 DQ33 DQ37 VCC VCC DQS4 DQM4 DQ34 DQ38 VSS VSS DQ35 DQ39 DQ40 DQ44 VCC VCC DQ41 DQ45 DQS5 DQM5 VSS VSS Pin 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 180 181 182 183 184 185 186 187 188 189 190 191 192 193 194 195 196 197 198 199 200 Symbol DQ42 DQ46 DQ43 DQ47 VCC VCC VCC CK1#* VSS CK1* VSS VSS DQ48 DQ52 DQ49 DQ53 VCC VCC DQS6 DQM6 DQ50 DQ54 VSS VSS DQ51 DQ55 DQ56 DQ60 VCC VCC DQ57 DQ61 DQS7 DQM7 VSS VSS DQ58 DQ62 DQ59 DQ63 VCC VCC SDA SA0 SCL SA1 VCCSPD SA2 VCCID NC
A0 - A12 BA0-BA1 DQ0-DQ63 CB0-CB7 DQS0-DQS8 CK0 CK0# CKE0-CKE1 CS0#-CS1# RAS# CAS# WE# DQM0-DQM8 VCC VSS VREF VCCSPD SDA SCL SA0-SA2 VCCID NC
W3EG7264S-AD4 -BD4
PRELIMINARY
PIN NAMES
Address input (Multiplexed) Bank Select Address Data Input/Output Check bits Data Strobe Input/Output Clock Input Clock input Clock Enable input Chip select Input Row Address Strobe Column Address Strobe Write Enable Data-In Mask Power Supply (2.5V) Ground Power Supply for Reference Serial EEPROM Power Supply (2.3V to 3.6V) Serial data I/O Serial clock Address in EEPROM VCC Identification Flag No Connect
* Not Used
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FUNCTIONAL BLOCK DIAGRAM
W3EG7264S-AD4 -BD4
PRELIMINARY
CS1# CS0# DQS0 DQM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DQM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DQM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 DQS8 DQM8 CS# CB0 CB1 CB2 CB3 CB4 CB5 CB6 CB7 DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS# DQS CK0 120 CK0A VCC DDR SDRAM DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS# DQS DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 CS# DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS# DQS DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DQM7 DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS# DQS CS# CS# DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS# DQS DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 DQS6 DQM6 DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS# DQS CS# CS# DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS# DQS DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DQM5 DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS# DQS CS# DQS4 DQM4 DM DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 CS# DQS
CS#
CS#
PLL
CK0# CK0A#
FEEDBACK RAS# CAS# BA0-BA1 WE# A0-A12 CKE0 CKE1 RAS: DDR SDRAMs CAS: DDR SDRAMs BA0-BA1: DDR SDRAMs WE: DDR SDRAMs A0-A12: DDR SDRAMs CKE0: DDR SDRAMs CKE1: DDR SDRAMs VCC GND DDR SDRAM DDR SDRAM SCL A0 SA0 A1 SA1 A2 SA2 SERIAL PD SDA
NOTE: All datalines are terminated through a 22 ohm series resistor.
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ABSOLUTE MAXIMUM RATINGS
Parameter Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Current
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
W3EG7264S-AD4 -BD4
PRELIMINARY
Symbol VIN, VOUT VCC, VCCQ TSTG PD IOS
Value - 0.5 ~ 3.6 -1.0 ~ 3.6 - 55 ~ +150 9 50
Units V V C W mA
0C TA 70C, VCC = 2.5V 0.2V
Parameter Supply Voltage Supply Voltage Reference Voltage Termination Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Symbol VCC VCCQ VREF VTT VIH VIL VOH VOL Min 2.3 2.3 1.15 1.15 VREF + 0.15 - 0.3 VTT + 0.76 -- Max 2.7 2.7 1.35 1.35 VCCQ + 0.3 VREF - 0.15 -- VTT - 0.76 Unit V V V V V V V V
DC CHARACTERISTICS
CAPACITANCE
TA = 25C, f = 1MHz, VCC = 2.5V Parameter Input Capacitance (A0-A12) Input Capacitance (RAS#,CAS#,WE#) Input Capacitance (CKE0,CKE1) Input Capacitance (CK0,CK0#) Input Capacitance (CS0#,CS1#) Input Capacitance (DQM0-DQM8) Input Capacitance (BA0-BA1) Data input/output Capacitance (DQ0-DQ63)(DQS) Data input/output Capacitance (CB0-CB7) Symbol CIN1 CIN2 CIN3 CIN4 CIN5 CIN6 CIN7 COUT COUT Max 56 56 29 5.5 29 13 56 13 13 Unit pF pF pF pF pF pF pF pF pF
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IDD SPECIFICATIONS AND TEST CONDITIONS
W3EG7264S-AD4 -BD4
PRELIMINARY
Recommended operating conditions, 0C TA 70C, VCCQ = 2.5V 0.2V, VCC = 2.5V 0.2V DDR333@CL=2.5 DDR266@CL=2, 2.5 Parameter Operating Current Symbol Conditions IDD0 One device bank; Active - Precharge; (MIN); DQ,DM and DQS inputs changing once per clock cycle; Address and control inputs changing once every two cycles. TRC=TRC(MIN); TCK=TCK One device bank; ActiveRead-Precharge; Burst = 2; TRC=TRC(MIN);TCK=TCK (MIN); Iout = 0mA; Address and control inputs changing once per clock cycle. All device banks idle; Power-down mode; TCK=TCK(MIN); CKE=(low) CS# = High; All device banks idle; TCK=TCK(MIN); CKE = high; Address and other control inputs changing once per clock cycle. VIN = VREF for DQ, DQS and DM. One device bank active; Power-down mode; TCK(MIN); CKE=(low) CS# = High; CKE = High; One device bank; Active-Precharge; TRC=TRAS(MAX); TCK=TCK(MIN); DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per clock cycle. Burst = 2; Reads; Continous burst; One device bank active;Address andcontrol inputs changing once per clock cycle; TCK=TCK(MIN); IOUT = 0mA. Burst = 2; Writes; Continous burst; One device bank active; Address and control inputs changing once per clock cycle; TCK=TCK(MIN); DQ,DM and DQS inputs changing twice per clock cycle. TRC=TRC(MIN) CKE 0.2V Four bank interleaving Reads (BL=4) with auto precharge with TRC=TRC (MIN); TCK=TCK(MIN); Address and control inputs change only during Active Read or Write commands Max 2205 Max 2025 DDR200@CL=2 Max 2025 Units mA
Operating Current
IDD1
2610
2340
2340
mA
Precharge Power-Down Standby Current Idle Standby Current
IDD2P IDD2F
72 900
72 810
72 810
mA mA
Active Power-Down Standby Current Active Standby Current
IDD3P IDD3N
540 1080
450 900
450 900
mA mA
Operating Current
IDD4R
2655
2250
2250
mA
Operating Current
IDD4W
2655
2250
2250
mA
Auto Refresh Current Self Refresh Current Operating Current
IDD5 IDD6 IDD7A
3375 72 4770
3015 72 4050
3015 72 4050
mA mA mA
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DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7A
IDD1 : OPERATING CURRENT : ONE BANK
1. 2. 3. Typical Case : VCC=2.5V, T=25C Worst Case : VCC=2.7V, T=10C Only one bank is accessed with tRC (min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. IOUT = 0mA Timing Patterns : * DDR200 (100 MHz, CL=2) : tCK=10ns, CL2, BL=4, tRCD=2*tCK, tRAS=5*tCK Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst DDR266 (133MHz, CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst DDR266 (133MHz, CL=2) : tCK=7.5ns, CL=2, BL=4, tRCD=3*tCK, tRC=9*tCK, tRAS=5*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst DDR333 (166MHz, CL=2.5) : tCK=6ns, BL=4, tRCD=10*tCK, tRAS=7*tCK Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing; 50% of data changing at every burst *
W3EG7264S-AD4 -BD4
PRELIMINARY
IDD7A : OPERATING CURRENT : FOUR BANKS
1. 2. 3. Typical Case : VCC=2.5V, T=25C Worst Case : VCC=2.7V, T=10C Four banks are being interleaved with tRC (min), Burst Mode, Address and Control inputs on NOP edge are not changing. Iout=0mA Timing Patterns : * DDR200 (100 MHz, CL=2) : tCK=10ns, CL2, BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst DDR266 (133MHz, CL=2.5) : tCK=7.5ns, CL=2.5, BL=4, tRRD=3*tCK, tRCD=3*tCK Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst DDR266 (133MHz, CL=2) : tCK=7.5ns, CL2=2, BL=4, tRRD=2*tCK, tRCD=2*tCK Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst DDR333 (166MHz, CL=2.5) : tCK=6ns, BL=4, tRRD=3*tCK, tRCD=3*tCK, Read with Autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing; 100% of data changing at every burst
4.
4.
*
*
*
*
*
Legend : A = Activate, R = Read, W = Write, P = Precharge, N = NOP A (0-3) = Activate Bank 0-3 R (0-3) = Read Bank 0-3
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W3EG7264S-AD4 -BD4
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
AC CHARACTERISTICS PARAMETER Access window of DQs from CK/CK# CK high-level width CK low-level width Clock cycle time SYMBOL MIN tAC -0.7 tCH 0.45 tCL 0.45 tCK (2.5) 7.6 tCK (2) 7.5 tDH 0.45 tDS 0.45 1.75 tDIPW tDQSCK -0.60 tDQSH 0.35 tDQSL 0.35 tDQSQ tDQSS tDSS tDSH tHP tHZ tLZ tIHF tISF tIHS tISS tIPW tMRD tQH tQHS tRAS tRAP tRC tRFC tRCD tRP tRPRE tRPST tRRD tWPRE tWPRES 0.75 0.2 0.2 tCH,tCL -0.70 0.75 0.75 0.80 0.80 2.2 12 tHP - tQHS 0.55 70,000 335 MAX +0.7 0.55 0.55 13 13 262 MIN +0.75 0.45 0.45 10 7.5 MAX -0.75 0.55 0.55 13 13 265 MIN +0.75 0.45 0.45 10 7.5 MAX -0.75 0.55 0.55 13 13 202 MIN +0.75 0.45 0.45 10 7.5 MAX -0.75 0.55 0.55 13 13 UNITS NOTES ns tCK 25 tCK 25 ns 37, 42 ns 41 ns 22, 26 ns 22, 26 ns 26 ns tCK tCK ns 22 tCK tCK tCK ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns tCK tCK ns tCK ns
CL = 2.5 CL = 2 DQ and DM input hold time relative to DQS DQ and DM input setup time relative to DQS DQ and DM input pulse width (for each input) Access window of DQS from CK/CK# DQS input high pulse width DQS input low pulse width DQS-DQ skew, DQS to last DQ valid, per group, per access Write command to first DQS latching transition DQS falling edge to CK rising - setup time DQS falling edge from CK rising - hold time Half clock period Data-out high-impedance window from CK/CK# Data-out low-impedance window from CK/CK# Address and control input hold time (1 V/ns) Address and control input setup time (1 V/ns) Address and control input hold time (0.5 V/ns) Address and control input setup time (0.5 V/ns) Address and Control input pulse width (for each input) LOAD MODE REGISTER command cycle time DQ-DQS hold, DQS to first DQ to go non-valid, per access Data hold skew factor ACTIVE to PRECHARGE command ACTIVE to READ with Auto precharge command ACTIVE to ACTIVE/AUTO REFRESH command period AUTO REFRESH command period ACTIVE to READ or WRITE delay PRECHARGE command period DQS read preamble DQS read postamble ACTIVE bank a to ACTIVE bank b command DQS write preamble DQS write preamble setup time
+0.60
+0.8
+0.8
+0.8
0.45 1.25 0.75 0.2 0.2 tCH,tCL -0.8 ns 1.1 1.1 1.1 2.2 16 tHP - tQHS
0.6 1.25 0.75 0.2 0.2 tCH,tCL -0.8 ns 1.1 1.1 1.1 2.2 16 tHP - tQHS
0.6 1.25 0.75 0.2 0.2 tCH,tCL -0.8 ns 1.1 1.1 1.1 2.2 16 tHP - tQHS
0.6 1.25
+0.70
+0.8 12
+0.8 12
+0.8 12
29 16, 36 16, 36 12 12 12 12
22
42 15 60 72 15 15 0.9 0.4 12 0.25 0
40 20 70 75 20 20 0.9 0.4 15 0.25 0
1 120,000
40 20 70 75 20 20 0.9 0.4 15 0.25 0
1 120,000
40 20 70 75 20 20 0.9 0.4 15 0.25 0
1 120,000
30
40
1.1 0.6
1.1 0.6
1.1 0.6
1.1 0.6
17, 19
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W3EG7264S-AD4 -BD4
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Continued)
AC CHARACTERISTICS PARAMETER DQS write postamble Write recovery time Internal WRITE to READ command delay Data valid output window REFRESH to REFRESH command interval Average periodic refresh interval Terminating voltage delay to VCC Exit SELF REFRESH to non-READ command Exit SELF REFRESH to READ command SYMBOL tWPST tWR tWTR na tREFC tREFI tVTD tXSNR tXSRD MIN 0.4 15 1 tQH - tDQSQ 70.3 7.8 0 75 200 335 MAX 0.6 MIN 0.4 15 1 tQH - tDQSQ 70.3 7.8 0 75 200 262 MAX 0.6 MIN 0.4 15 1 tQH - tDQSQ 70.3 7.8 0 75 200 265 MAX 0.6 MIN 0.4 15 1 tQH - tDQSQ 70.3 7.8 0 75 200 202 MAX 0.6 UNITS NOTES tCK 17 ns tCK ns s s ns ns tCK 22 21 21
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Notes 1. All voltages referenced to VSS. 2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. Outputs (except for IDD measurements) measured with equivalent load:
W3EG7264S-AD4 -BD4
PRELIMINARY
VTT TT 50 Reference Point 30pF
Output (VOUT (VOUT)
4. AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The mini-mum slew rate for the input signals used to test the device is 1 V/ns in the range between VIL(AC) and VIH(AC). 5. The AC and DC input level specifications are as defined in the SSTL_2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the AC input level and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [HIGH] level). 6. VREF is expected to equal VCC/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (noncommon mode) on VREF may not exceed 2 percent of the DC value. Thus, from VCC/2, VREF is allowed 25mV for DC error and an additional 25mV for AC noise. This measurement is to be taken at the nearest VREF bypass capacitor. 7. VTT is not applied directly to the device. VTT, a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF. 8. VID is the magnitude of the difference between the input level on CK and the input level on CK#. 9. The value of VIX and VMP are expected to equal VCC/2 of the transmitting device and must track variations in the DC level of the same. 10. IDD is dependent on output loading and cycle rates. Specified values are obtained with mini-mum cycle times at CL = 2.5 for 335, and CL = 2 for 262, 265 and 202 speeds with the outputs open. 11. Enables on-chip refresh and address counters. 12. IDD specifications are tested after the device is properly initialized and is averaged at the defined cycle rate. 13. This parameter is sampled. VCC = +2.5V0.2V, VCC = +2.5V0.2V, VREF = VSS, f = 100 MHz, TA = 25C, VOUT (DC) = VCC/2, VOUT (peak to peak) = 0.2V. DM input is grouped with I/O pins, reflecting that they are matched in loading. 14. For slew rates < 1 V/ns and 0.5 V/ns. If slew rate is less than 0.5 V/ns, timing must be derated; tIS has an additional 50ps per each 100mV/ns reduction in slew rate from the 500mV/ns, while tIH is unaffected. If the slew rate exceeds 4.5 V/ns, functionality is uncertain. For 335, slew rates must be greater than or equal to 0.5V/ns. 15. The CK/CK# input reference level (for timing referenced to CK/CK#) is the point at which CK and CK# cross; the input reference level for signals other than CK/CK# is VREF. 16. Inputs are not recognized as valid until VREF stabilizes. Once initialized, including Self-Refresh mode, VREF must be powered within the specified range. Exception: during the period before VREF stabilizes, CKE = 0.3 x VCC is recognized as LOW. 17. The output timing reference level, as measured at the timing reference point indicated in Note 3, is VTT.
18. tHZ and tLZ transitions occur in the same access time windows as data valid transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ) or begins driving (LZ). 19. The intent of the "Don't Care" state after completion of the postamble is that the DQS-driven signal should either be HIGH, LOW, or High-Z and that any signal transition within the input switching region must follow valid input requirements. If DQS transitions HIGH, above DC VIH (MIN) then it must not transition LOW, below DC VIH, prior to tDQSH (MIN). 20. This is not a device limit. The device will operate with a negative value, but system performance could be degraded due to bus turnaround. 21. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be HIGH during this time, depending on tDQSS. 22. tRC (MIN) or tRFC (MIN) for IDD measurements is the smallest multiple of tCK that meets the minimum absolute value for the respective parameter. tRAS (MAX) for IDD measurements is the largest multiple of tCK that meets the maxi-mum absolute value for tRAS. 23. The refresh period is 64ms. This equates to an average refresh rate of 7.8125s. However, an AUTO REFRESH command must be asserted at least once every 70.3s; burst refreshing or posting by the DRAM controller greater than eight refresh cycles is not allowed. 24. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum amount for any given device. 25. The data valid window is derived by achieving other specifications: tHP (tCK/2), tDQSQ, and tQH (tQH = tHP - tQHS). The data valid window derates in direct proportion to the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty-cycle variation of 45/55, because functionality is uncertain when operating beyond a 45/55 ratio. 26. Referenced to each output group: x4 = DQS with DQ0-DQ3; x8 = DQS with DQ0-DQ7; x16 = LDQS with DQ0-DQ7; and UDQS with DQ8-DQ15. 27. This limit is actually a nominal value and does not result in a fail value. CKE is HIGH during REFRESH command period (tRFC [MIN]) else CKE is LOW (i.e., during standby). 28. To maintain a valid level, the transitioning edge of the input must: a. Sustain a constant slew rate from the current AC level through to the target AC level, VIL (AC) or VIH (AC). b. Reach at least the target AC level. c. After the AC target level is reached, continue to maintain at least the target DC level, VIL (DC) or VIH (DC). 29. The Input capacitance per pin group will not differ by more than this maximum amount for any given device. 30. CK and CK# input slew rate must be 1V/ns ( 2V/ns if measured differentially). 31. DQ and DM input slew rates must not deviate from DQS by more than 10 percent. If the DQ/ DM/DQS slew rate is less than 0.5 V/ns, timing must be derated: 50ps must be added to tDS and tDH for each 0.1 V/ns reduction in slew rate. For 335 speed grades, slew rate must be 0.5 V/ns. If slew rate exceeds 4 V/ns, functionality is uncertain. 32. VCC must not vary more than four percent if CKE is not active while any bank is active. 33. The clock is allowed up to 150ps of jitter. Each timing parameter is allowed to vary by the same amount. 34. tHP (MIN) is the lesser of tCL minimum and tCH minimum actually applied to the device CK and CK# inputs, collectively during bank active. 35. READs and WRITEs with auto precharge are not allowed to be issued until tRAS (MIN) can be satisfied prior to the internal PRECHARGE command being issued.
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36. Any positive glitch must be less than 1/3 of the clock cycle and not more than +400mV or 2.9V. Any negative glitch must be less than 1/3 of the clock cycle and not exceed either -300mV or 2.2V. 37. The voltage levels used are derived from a mini-mum VCC level and the referenced test load. In practice, the voltage levels obtained from a properly terminated bus will provide significantly different voltage values. 38. VIH overshoot: VIH (MAX) = VCC + 1.5V for a pulse width 3ns and the pulse width can not be greater than 1/3 of the cycle rate. VIL under-shoot: VIL (MIN) = -1.5V for a pulse width 3ns and the pulse width can not be greater than 1/3 of the cycle rate. 39. VCC and VCC must track each other. 40. tHZ (MAX) will prevail over tDQSCK (MAX) + tRPST (MAX) condition. tLZ (MIN) will prevail over tDQSCK (MIN) + tRPRE (MAX) condition. 41. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving (tRPST), or begins driving (tRPRE). 42. During initialization, VCC, VTT, and VREF must be equal to or less than VCC + 0.3V. Alternatively, VTT may be 1.35V maximum during power-up, even if VCC/VCC are 0V, provided a minimum of 42 of series resistance is used between the VTT supply and the input pin. 43. The current part operates below the slowest JEDEC operating frequency of 83 MHz. As such, future die may not reflect this option.
W3EG7264S-AD4 -BD4
PRELIMINARY
44. When an input signal is indicated to be HIGH or LOW, it is defined as a steady state logic HIGH or LOW. 45. Random addressing changing; 50 percent of data changing at every transfer. 46. Random addressing changing; 100 percent of data changing at every transfer. 47. CKE must be active (HIGH) during the entire time a refresh command is executed. That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until tRFC has been satisfied. 48. IDD2N specifies the DQ, DQS and DM to be driven to a valid HIGH or LOW logic level. IDD2Q is similar to IDD2F except IDD2Q specifies the address and control inputs to remain stable. Although IDD2F, IDD2N, and IDD2Q are similar, IDD2F is "worst case." 49. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset followed by 200 clock cycles before any READ command. 50. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20 MHz. Any noise above 20 MHz at the DRAM generated from any source other than that of the DRAM itself may not exceed the DC voltage range of 2.6V100mV. 51. The 335 speed grades will operate with tRAS(min) = 40ns and tRAS(max) = 120,000ns at any slower frequency.
January 2005 Rev. 3
10
White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com
White Electronic Designs
ORDERING INFORMATION FOR BD4
Part Number W3EG7264S335BD4 W3EG7264S262BD4 W3EG7264S265BD4 W3EG7264S202BD4 Speed 166MHz/333Mbps, CL=2.5 133MHz/266Mbps, CL=2 133MHz/266Mbps, CL=2.5 100MHz/200Mbps, CL=2
W3EG7264S-AD4 -BD4
PRELIMINARY
Height* 31.75 (1.25") 31.75 (1.25") 31.75 (1.25") 31.75 (1.25")
NOTES: * Consult Factory for availability of RoHS compliant products. (G = RoHS Compliant) * Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case "x" in the part numbers above and is to be replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others) * Consult factory for availability of industrial temperature (-40C to 85C) option
PACKAGE DIMENSIONS FOR BD4
67.56 (2.666) MAX 3.98 0.1 (0.157 0.004)
6.35 (0.250) MAX.
31.75 (1.25) 20 (0.787)
2.31 (0.091) REF.
4.19 (0.165) 1.80 (0.071) 11.40 (0.449)
47.40 (1.866)
3.99 (0.157) MIN. 0.99 0.10 (0.039 0.004)
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES)
January 2005 Rev. 3
11
White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com
White Electronic Designs
ORDERING INFORMATION FOR AD4
Part Number W3EG7264S335AD4 W3EG7264S262AD4 W3EG7264S265AD4 W3EG7264S202AD4 Speed 166MHz/333Mbps, CL=2.5 133MHz/266Mbps, CL=2 133MHz/266Mbps, CL=2.5 100MHz/200Mbps, CL=2
W3EG7264S-AD4 -BD4
PRELIMINARY
Height* 35.05 (1.38") 35.05 (1.38") 35.05 (1.38") 35.05 (1.38")
NOTES: * Consult Factory for availability of RoHS compliant products. (G = RoHS Compliant) * Vendor specific part numbers are used to provide memory components source control. The place holder for this is shown as lower case "x" in the part numbers above and is to be replaced with the respective vendors code. Consult factory for qualified sourcing options. (M = Micron, S = Samsung & consult factory for others) * Consult factory for availability of industrial temperature (-40C to 85C) option
PACKAGE DIMENSIONS FOR AD4
67.56 (2.66) MAX. 2.0 (0.079) 3.98 0.1 (0.157 0.004)
6.35 (0 .250) MAX.
35.05 (1.38) MAX. 20 (0.787)
P1
2.31 (0.091) REF.
4.19 (0.165) 1.80 (0.071) 11.40 (0.449)
47.40 (1.866)
3.98 (0.157) MIN. 1.0 0.1 (0.039 0.004)
* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES)
January 2005 Rev. 3
12
White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com
White Electronic Designs
Document Title
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL
W3EG7264S-AD4 -BD4
PRELIMINARY
Revision History Rev #
Rev 0 Rev 1
History
Created 1.1 Added "BD4" package option 1.2 Updated CAP and IDD specs 1.3 Removed "ED" from part number 1.4 Changed datasheet from Advanced to Preliminary
Release Date
8-1-03 6-04
Status
Advanced Preliminary
Rev 2 Rev 3
2.1 Added AC Specs 3.1 Added lead-free and RoHS notes 3.2 Added source control notes 3.2 Added industrial temperature option
10-04 1-05
Preliminary Preliminary
January 2005 Rev. 3
13
White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com

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